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Electronics

Code:

VE08

Sigla:

ELET

Áreas Científicas
Classificação	Área Científica
CNAEF	Electronics and automation

Ocorrência: 2022/2023 - 2S

Ativa?	Yes
Página Web:	https://moodle.ips.pt/2122/course/view.php?id=669
Unidade Responsável:	Departamento de Engenharia Eletrotécnica
Curso/CE Responsável:	Professional Technical Higher Education Courses in Electric Vehicles

Ciclos de Estudo/Cursos

Sigla	Nº de Estudantes	Plano de Estudos	Anos Curriculares	Créditos UCN	Créditos ECTS	Horas de Contacto	Horas Totais
TSPVE	14	Plano de Estudos_2015_16	1	-	6	60	162

Língua de trabalho

Portuguese

Objetivos

Describe the characteristics of semiconductors.
Distinguish P-type and N-type semiconductors.
Characterize the PN junction.
Carry out calculations for the polarization of diodes.
Carry out assemblies with diodes and carry out the analysis
of the circuits.
To characterize the different types of circuits used in the
rectification.
Describe Zener diodes in terms of their
constitution, characteristics and applications.
Recognize the constitution, types and symbology of the
bipolar transistor.
To characterize the functioning of the bipolar transistor.
Identify the fundamental assemblies: EC, BC, CC.
Analyze the characteristic curves of the transistor in EC.
Analyze the amplifier for EC, BC and CC signals.
Characterize the structure and functioning of the various
types of FET
Characterize the structure and principle of
thyristor operation.
Implement circuits with JFET, MOSFET

Resultados de aprendizagem e competências

After this CU the student is able to design, assemble and repair
circuits with diodes and transistors.

Modo de trabalho

Presencial

Pré-requisitos (conhecimentos prévios) e co-requisitos (conhecimentos simultâneos)

electrical engineering

Programa

1. Junction Diode: Semiconductor Concept. Intrinsic and extrinsic semiconductor.
PN junction. Non-polarized PN junction. Directly biased PN junction. PN junction
reverse polarized. Conventional sense of voltage and current in the diode.
V-I characteristic of the diode. Diode symbology. Linear model by sections, Model
linear by simplified sections, Ideal diode model. Diode applications. Resistance
diode dynamics. Special diodes.
2. Bipolar Junction Transistor (BJT): Bipolar Junction Transistor (BJT). BJT NPN. BJT
PNP Symbology of NPN and PNP transistors. Conventional sense of currents and
tensions in the BJTs. Transistor operating modes: ZAD (Zone Actva Directa), ZS
(Saturation Zone), ZC (Cutting Zone), ZAI (Inverse Active Zone). BJT models
for the different modes of operation. Early Effect. BJT characteristic curves,
Basic BJT mounting settings and polarization loops. Determination of
operation mode. Operating point at rest (PFR). BJT as a switch.
BJT as amplifier (E.C). Compensation of the temperature effect (Emitter
Ordinary). BJT model for small signals at medium frequencies. Function of
coupling and bypass capacitors (Common Emitter). project of meshes of
polarization (Common Emitter).
3. Metal Oxide Semiconductor Transistor (MOSFET): Metal Oxide Transistor
Semiconductor (MOSFET) N channel. Metal Oxide Semiconductor Transistor (MOSFET)
P channel. MOSFET characteristic curves. enrichment and depletion MOSFET.
Commonly used symbologies for FETs. Conventional sense of currents and voltages
in the FET. Operating modes of field effect transistors. models of
MOSFET for the different operating modes. Determining the operating mode.
Static load line. Operating Point at Rest. Polarization Meshes.
FET as a switch. Project of polarization meshes. The MOSFET as
amplifier. MOSFET model for small signals at medium frequencies. brief
reference to the Junction Field Effect Transistor (JFET).

Bibliografia Obrigatória

Robert Boylestad / Louis Nashelsky; Dispositivos Electrónicos e Teoria dos Circuitos, Prentice Hall. ISBN: ISBN: 85-216-1195-1
Manuel de Medeiros Silva; Circuitos com Transistores Bipolares e MOS, Calouste Gulbenkian. ISBN: ISBN: 972-31-0840-2
Manuel de Medeiros Silva; Introdução aos circuitos eléctricos e electrónicos, Calouste Gulbenkian. ISBN: ISBN: 972-31-0696-5
Adel Sedra / Kenneth Smith; Microelectronics Circuits, Oxford Univ Pr on Demand. ISBN: ISBN: 0-19-511690-9

Métodos de ensino e atividades de aprendizagem

Theoretical-Practical Classes and Laboratory classes with simulation
of circuits and assembly and testing of circuits.

Software

Pspice ou Multisim

Palavras Chave

Technological sciences > Engineering > Electronic engineering

Tipo de avaliação

Distributed evaluation without final exam

Componentes de Avaliação

Designation	Peso (%)
Teste	60,00
Trabalho laboratorial	40,00
Total:	100,00

Componentes de Ocupação

Designation	Tempo (Horas)
Estudo autónomo	52,00
Frequência das aulas	30,00
Trabalho laboratorial	50,00
Trabalho escrito	30,00
Total:	162,00

Obtenção de frequência

The minimum grade in each test is 8 values.

The minimum number of reports to be submitted is 3.

The final grade for practical assignments will be the average of the 3 best reports out of 4.

The laboratory component is mandatory without which the student will not pass the UC.

Fórmula de cálculo da classificação final

FG = 60% * test average + 40% * work average practical