Electronics
Áreas Científicas |
Classificação |
Área Científica |
CNAEF |
Electronics and automation |
Ocorrência: 2021/2022 - 2S
Ciclos de Estudo/Cursos
Sigla |
Nº de Estudantes |
Plano de Estudos |
Anos Curriculares |
Créditos UCN |
Créditos ECTS |
Horas de Contacto |
Horas Totais |
REID |
19 |
Plano de Estudos 2018/19 |
1 |
- |
6 |
60 |
162 |
Docência - Responsabilidades
Língua de trabalho
Portuguese
Objetivos
Describe the characteristics of semiconductors.
Distinguish P-type and N-type semiconductors.
Characterize the PN junction.
Carry out calculations for the polarization of diodes.
Carry out assemblies with diodes and analyze the circuits.
Characterize the different types of circuits used in rectification.
Describe Zener diodes in terms of their constitution, characteristics and applications.
Recognize the constitution, types and symbology of the bipolar transistor.
To characterize the functioning of the bipolar transistor.
Identify the fundamental assemblies: EC, BC, CC.
Analyze the characteristic curves of the transistor in EC.
Analyze the amplifier for EC, BC and CC signals.
Characterize the structure and functioning of the various types of FET
To characterize the structure and working principle of the thyristor.
Implement circuits with JFET, MOSFET
Resultados de aprendizagem e competências
After this CU the student is able to design, assemble and repair circuits with diodes and transistors.
Modo de trabalho
Presencial
Pré-requisitos (conhecimentos prévios) e co-requisitos (conhecimentos simultâneos)
electrical engineering
Programa
1. Junction Diode Semiconductor Concept. Intrinsic and extrinsic semiconductor. PN junction. Non-polarized PN junction. Directly biased PN junction. Reverse-biased PN junction. Conventional direction of voltage and current in the diode. V-I characteristic of the diode. Diode symbology. Linear loop model, Simplified loop linear model, Ideal diode model. Diode applications. Dynamic resistance of the diode. Special diodes. 2. Bipolar Junction Transistor (BJT) Bipolar Junction Transistor (BJT). BJT NPN. BJT PNP. Symbology of NPN and PNP transistors. Conventional direction of currents and voltages in BJTs. Transistor operating modes: ZAD (Forward Active Zone), ZS (Saturation Zone), ZC (Cutoff Zone), ZAI (Inverse Active Zone). BJT models for the different operating modes. Early Effect. BJT Characteristics Curves, Basic BJT Mounting Settings and Polarization Meshes. Determining the operating mode. Operating point at rest (PFR). BJT as a switch. BJT as amplifier (E.C). Temperature effect compensation (Common Emitter). BJT model for small signals at medium frequencies. Function of coupling and bypass capacitors (Common Emitter). Design of polarization loops (Common Emitter). 3. Metal Oxide Semiconductor Transistor (MOSFET) Metal Oxide Semiconductor Transistor (MOSFET) N channel. Metal Oxide Semiconductor Transistor (MOSFET) P channel. Characteristic curves of the MOSFET. enrichment and depletion MOSFET. Commonly used symbologies for FETs. Conventional direction of currents and voltages in the FETs. Operating modes of field effect transistors. MOSFET models for the different operating modes. Determining the operating mode. Static load line. Operating Point at Rest. Polarization Meshes. FET as a switch. Design of polarization meshes. The MOSFET as an amplifier. MOSFET model for small signals at medium frequencies. Brief reference to the Junction Field Effect Transistor - JFET
Bibliografia Obrigatória
Robert Boylestad / Louis Nashelsky; Dispositivos Electrónicos e Teoria dos Circuitos, Prentice Hall. ISBN: ISBN: 85-216-1195-1
Manuel de Medeiros Silva; Circuitos com Transistores Bipolares e MOS, Calouste Gulbenkian. ISBN: ISBN: 972-31-0840-2
Adel Sedra / Kenneth Smith; Adel Sedra / Kenneth Smith;Microelectronics Circuits, Oxford Univ Pr on Demand. ISBN: ISBN: 0-19-511690-9
Manuel de Medeiros Silva; Introdução aos circuitos eléctricos e electrónicos, Calouste Gulbenkian. ISBN: ISBN: 972-31-0696-5
Métodos de ensino e atividades de aprendizagem
Theoretical-Practical classes and laboratory classes with circuit simulation and circuit assembly and testing.
Software
Pspice ou Multisim
Palavras Chave
Technological sciences > Engineering > Electronic engineering
Tipo de avaliação
Distributed evaluation without final exam
Componentes de Avaliação
Designation |
Peso (%) |
Teste |
60,00 |
Trabalho laboratorial |
40,00 |
Total: |
100,00 |
Componentes de Ocupação
Designation |
Tempo (Horas) |
Estudo autónomo |
52,00 |
Frequência das aulas |
30,00 |
Trabalho laboratorial |
50,00 |
Trabalho escrito |
30,00 |
Total: |
162,00 |
Obtenção de frequência
The minimum grade in each test is 8 values.
The minimum number of reports to be submitted is 3.
The final grade for practical assignments will be the average of the 3 best reports out of 4.
Fórmula de cálculo da classificação final
FG = 60% * average of tests + 40% * average of practical work