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Electronics

Code:

LTE21113

Sigla:

ELET

Áreas Científicas
Classificação	Área Científica
OFICIAL	Electronics and Telecommunications

Ocorrência: 2022/2023 - 1S

Ativa?	Yes
Unidade Responsável:	Departamento de Engenharia Eletrotécnica
Curso/CE Responsável:

Ciclos de Estudo/Cursos

Sigla	Nº de Estudantes	Plano de Estudos	Anos Curriculares	Créditos UCN	Créditos ECTS	Horas de Contacto	Horas Totais
LTE	44	Plano de Estudos	2	-	6	75	162

Língua de trabalho

Portuguese
Obs.: Português

Objetivos

Enumerate the concept of semiconductor material;
Classify the different materials according to their electrical conductivity in conductors, semiconductors and doores;
Point out the differences between intrinsic and extrinsic semiconductor material;
Understand the driving process in the various diodes (rectifier, light emitter and Zener);
Understand the avalanche process in zener diode;
Question and interpret driving states in the rectifier diode, light-emitting diode, and Zener diode;
Understand the difference between conventional sense and real sense of an electric current;
Know the symbology associated with different diodes;
Analyze circuits with rectifier diodes, LED and Zener;
Apply the different driving models associated with diodes;
Understand the constitution of the bipolar junction transistor (TBJ)/Metal oxide Semiconductor (MOSFET);
Identify the symbology of TBJ/MOSFET;
Distinguish NPN transistor from PNP;
Distinguish MOSFET transistor from Channel N from P-channel;
Understand the operation of mosfet enrichment and depletion;
Identify and analyze MOSFET models for the various modes of operation;
Understand the driving process in TBJ/MOSFET;
Identify and understand the modes of operation of TBJ/MOSFET;
Identify the main assemblies of a transistor (TBJ/MOSFET) and its polarization meshes;
Evaluate the transistors (TBJ/MOSFET) as a switch/amplifier element;
Identify, understand and interpret the main characteristic curves of TBJ/MOSFET;
Evaluate the resting point of tbj/MOSFET;
Understand the effect of temperature compensation on the common emitting assembly;
Identify and understand the function of coupling and bypass capacitors;
Design polarization meshes in the common emitter/common font configuration;
Analyze low complexity electronic circuits;
Simulate low-complexity electronic circuits;
Assemble, test and experiment electronic circuits with low-complexity;

Resultados de aprendizagem e competências

At the end of the course, students must be able to:

• Know and describe how semiconductor eletronic devices work;


• Know the application fields of each semiconductor electronic device;

• Realize, project and validate low complexity electronic circuits;


• Use properly electronic instruments in experimental field regarding electrical signals and electrical parameters, and also be able to test semiconductor electronic devices.

Modo de trabalho

Presencial

Pré-requisitos (conhecimentos prévios) e co-requisitos (conhecimentos simultâneos)

Knowledge acquired in Eletrotechnical syllabus, inwhere objective and bibliography is described in the respective Discipline Form at ESTSetubal Information System.

Programa

Juntion diode

Semiconductor concept. Intrinsic and extrinsic semiconductor. PN junction. Non-polarized PN junction. Directly polarized PN junction. PN junction inversely polarized. Conventional voltage and current direction in diode. V-I feature of the diode. Symbology of the diode. Linear model by sections, Linear model by simplified sections, Ideal diode model. Diode applications. Dynamic diode resistance. Special diodes.

Bipolar Junction Transistor

Bipolar junction transistor (BJT). NPN BJT. PNP BJT. Symbology of NPN and PNP transistors. Conventional direction of currents and voltages in BJT. Modes of operation of transistors: ZAD (Direct Active Zone), ZS (Saturation Zone), ZC (Cutting Zone), ZAI (Reverse Active Zone).BJT models for the various modes of operation. Early effect. BJT's characteristic curves, BJT basic mounting configurations and polarization meshes. Determination of the mode of operation. Operating point at rest (PFR). BJT as a switch. BJT as amplifier (E.C). Temperature effect compensation (Common Emitter). Function of coupling and bypass capacitors (Common Emitter). Polarization meshes project (Common Emitter).

Metal Oxide Semiconductor Transistor

Metal Semiconductor Oxide Transistor (MOSFET) channel N. Metal Semiconductor Oxide Transistor (MOSFET) channel P.  Characteristic curves of MOSFET. Enrichment and depletion. Most commonly used symbologies for FET. Conventional direction of currents and voltages in FET. Modes of operation of field effect transistors. Determination of the mode of operation. Static load straight. Resting Point of Operation. Polarization meshes. FET as a switch. Polarization meshes project. The MOSFET as an amplifier. Brief reference to the Junction Field Effect Transistor (JFET).

Bibliografia Obrigatória

Robert Boylestad; Louis Nashelsky; Dispositivos eletrónicos e teoria dos circuitos, Pearson International Edition, 2013. ISBN: 978-85-64574-21-2

Bibliografia Complementar

Adel S. Sedra; Kenneth C. Smith; Microelectronics Circuits, Oxford University Press, 2019. ISBN: 78-0190853464
Manuel de Medeiros Silva; Introdução aos Circuitos Eléctricos e Electrónicos, Fundação Calouste Gulbenkian, 2014. ISBN: 9789723106961
Manuel de Medeiros Silva; Circuitos com Transistores Bipolares e MOS, Fundação Calouste Gulbenkian, 2003. ISBN: 972-31-0840-2
Acácio Amaral; Electrónica Analógica: Princípios, Análise e Projectos, Edições Silabo, 2014. ISBN: 978-972-618-767-7

Métodos de ensino e atividades de aprendizagem

Theoretical-Practical Classes: Method of exposure and interactive demonstration, with continuous evaluation.

Laboratory Classes: Experimental method applied to the development of circuits and systems based on the knowledge acquired in the theoretical-practical classes.

Software

PSPICE Student
TinkerCad

Tipo de avaliação

Distributed evaluation without final exam

Componentes de Avaliação

Designation	Peso (%)
Participação presencial	20,00
Teste	40,00
Trabalho laboratorial	40,00
Total:	100,00

Componentes de Ocupação

Designation	Tempo (Horas)
Estudo autónomo	87,00
Frequência das aulas	45,00
Trabalho laboratorial	30,00
Total:	162,00

Obtenção de frequência

Throughout the semester students are submitted to three mini-tests, several open questions and kahoot questionnaires and perform extra-formative minitests.

• If the attendance to the Theoretical-Practical classes is less than 75 %, the student can only perform the theoretical component in Exam Season, that is, the student is excluded from the continuous evaluation process;

• The minimum score in each minitest may not be less than eight (8) values;

• It is only possible to recover the classification obtained in one of the minitests, and you can only recover this test on the date of the Normal Season exam. If you fail in two or more minitests, your theoretical evaluation will be sent to the examination;

• The score obtained in the Theoretical Examination cannot be less than 10 (ten) values;

• The average Laboratory Work (TL) cannot be less than ten (10) values.

Fórmula de cálculo da classificação final

The final grade (NF) in the discipline is obtained according to the formula,

      NF = 0.60 * AT + 0.40 * TL

• Theoretical Evaluation (TA) = 0.1 Qaula + 0.4 MT + 0.1 Qopen;

• Qaula - Classroom questions (at least 3 questions);

• MT - Minitests (3);


• Qopen - Open questions submitted via moodle/Kahoot;

• Average Laboratory Work (TL);

Melhoria de classificação

The performance of examination tests for the purpose of improvement is subject to registration in the Academic Secretariat according to the current rules. The improvement of the score focuses solely and exclusively on the theoretical component of the evaluation (TA).