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Electronics I

Code: LEEC21113     Sigla: ELECT1

Áreas Científicas
Classificação Área Científica
OFICIAL Electrónica e Telecomunicações

Ocorrência: 2021/2022 - 2S

Ativa? Yes
Unidade Responsável: Departamento de Engenharia Eletrotécnica
Curso/CE Responsável: Electrical and Computer Engineering

Ciclos de Estudo/Cursos

Sigla Nº de Estudantes Plano de Estudos Anos Curriculares Créditos UCN Créditos ECTS Horas de Contacto Horas Totais
EEC 69 Plano de Estudos 1 - 6 75 162

Docência - Responsabilidades

Docente Responsabilidade
José Inácio Pinto Rosado Rocha

Docência - Horas

Theorethical and Practical : 3,00
Practical and Laboratory: 2,00
Type Docente Turmas Horas
Theorethical and Practical Totais 2 6,00
José Inácio Pinto Rosado Rocha 6,00
Practical and Laboratory Totais 4 8,00
António Paulo Duarte Gomes de Abreu 6,00
Mário Jorge Brandão Correia 2,00

Língua de trabalho

Portuguese
Obs.: Português

Objetivos


Apontar as diferenças entre material semicondutor intrínseco e extrínseco;Compreender o processo de condução nos vários díodos (retificador, emissor de luz e zener);Entender o processo de avalanche no díodo de zener;Questionar e interpretar os estados de condução no díodo retificador, díodo emissor de luz e díodo de zener;Compreender a diferença entre sentido convencional e sentido real de uma corrente eléctrica;Conhecer a simbologia associada aos diferentes díodos;Analisar circuitos com diodos rectificadores, LED e zener;Aplicar os diferentes modelos de condução associados aos díodos;Compreender a constituição do transístor bipolar de junção (TBJ)/Metal óxido Semicondutor (MOSFET);Identificar a simbologia do TBJ/MOSFET;Distinguir transístor NPN de PNP; Enumerate the concept of semiconductor material; Point out the differences between intrinsic and extrinsic semiconductor material; Understand the conduction process in the various diodes (rectifier, light emitter and zener); Understand the avalanche process in the zener diode; Question and interpret the conduction states in the rectifier diode, light emitting diode and zener diode; Understand the difference between conventional and real sense of an electric current; Know the symbology associated with the different diodes; Analyze circuits with rectifier diodes, LED and zener; Apply the different conduction models associated with diodes; Understand the constitution of the Bipolar Junction Transistor (TBJ)/Metal Oxide Semiconductor (MOSFET); Identify the TBJ/MOSFET symbology; Distinguish NPN from PNP transistor;
Distinguish N-channel from P-channel MOSFET transistor; Understand how the enrichment and depletion MOSFET works; Identify and analyze the MOSFET models for the different modes of operation; Understand the driving process in the TBJ/MOSFET; Identify and understand the TBJ/MOSFET operating modes; Identify the main assemblies of a transistor (TBJ/MOSFET) and their polarization meshes; Evaluate the transistor (TBJ/MOSFET) as a switch/amplifier element; Identify, understand and interpret the main characteristic curves of the TBJ/MOSFET; Evaluate the resting point of operation of the TBJ/MOSFET; Understand the temperature compensation effect in the common emitter assembly; Identify and understand the function of coupling and contour capacitors; Design polarization meshes in common emitter/common source configuration; Analyze low complexity electronic circuits; Simulate low complexity electronic circuits; Interpret and understand the function of coupling and contour capacitors in low-complexity assemblies; Locate the presence of coupling and bypass capacitors in an electronic amplifier circuit; Assemble, test and experiment with low-complexity electronic circuits; Interpret the model for small signals in the medium frequencies of the TBJ/MOSFET transistor; Apply the small signal model in different assemblies with the TBJ/MOSFET transistor; Simulate and test the TBJ/MOSFET transistor for small signals at medium frequencies;.


Resultados de aprendizagem e competências

The theoretical-practical expositions by the teachers promote the acquisition of up-to-date knowledge on the topics studied. At the same time, the realization of application problems/simulations independently is encouraged, with subsequent presentation of results obtained by the students (in groups or individually) that motivate reflection, criticism, and help a greater participation in the learning process. Viewing videos demonstrating the operation of the various electronic devices.

Laboratory Classes: Simulation/Experimental method applied to the development of circuits and systems based on the knowledge acquired in theoretical/practical classes.

Modo de trabalho

Presencial

Pré-requisitos (conhecimentos prévios) e co-requisitos (conhecimentos simultâneos)

The knowledge acquired in the discipline of Electrotechnics, whose objective and bibliography are described in the respective Discipline Sheet, in this Information System.

Programa

Junction Diode
Semiconductor Concept. Intrinsic and extrinsic semiconductor. PN junction. Non-polarized PN junction. Directly biased PN junction. Reverse-biased PN junction. Conventional direction of voltage and current in the diode. V-I characteristic of the diode. Diode symbology. Linear model, Simplified linear model, Ideal diode model. Diode applications. Dynamic resistance of the diode. Special diodes.

Bipolar Junction Transistor (BJT) Bipolar Junction Transistor (BJT). BJT NPN. BJT PNP. Symbology of NPN and PNP transistors. Conventional direction of currents and voltages in BJTs. Transistor operating modes: ZAD (Forward Active Zone), ZS (Saturation Zone), ZC (Cutoff Zone), ZAI (Reverse Active Zone). BJT models for the different operating modes. Early Effect. BJT Characteristics Curves, Basic BJT Mounting Settings and Polarization Meshes. Determining the operating mode. Operating point at rest (PFR). BJT as a switch. BJT as amplifier (E.C). Temperature effect compensation (Common Emitter). BJT model for small signals at medium frequencies. Function of coupling and bypass capacitors (Common Emitter). Project of polarization meshes (Common Emitter).

Metal Oxide Semiconductor Transistor (MOSFET) Metal Oxide Semiconductor Transistor (MOSFET) N channel. Metal Oxide Semiconductor Transistor (MOSFET) P channel. Characteristic curves of the MOSFET. enrichment and depletion MOSFET. Commonly used symbologies for FETs. Conventional direction of currents and voltages in the FETs. Operating modes of field effect transistors. MOSFET models for the different operating modes. Determining the operating mode. Static load line. Operating Point at Rest. Polarization Meshes. FET as a switch. Project of polarization meshes. The MOSFET as an amplifier. MOSFET model for small signals at medium frequencies.

Bibliografia Obrigatória

Robert Boylestad / Louis Nashelsky; Dispositivos Electrónicos e Teoria dos Circuitos. ISBN: 85-216-1195-1
Adel Sedra / Kenneth Smith; Microelectronics Circuits, 1998. ISBN: 0-19-511690-9

Bibliografia Complementar

Manuel de Medeiros Silva; Circuitos com Transistores Bipolares e MOS, Fundação Calouste Gulbenkian. ISBN: 972-31-0840-2
Manuel de Medeiros Silva; Introdução aos circuitos eléctricos e electrónicos. ISBN: 972-31-0696-5
Acácio Amaral; Electrónica Analógica: Princípios, Análise e Projectos, Edições Silabo, 2014. ISBN: 978-972-618-767-7

Métodos de ensino e atividades de aprendizagem

The main goal of this course unit is to impart knowledge necessary to understand the fundamental elements of electronics. Develop skills for analysis, design, simulation and execution of low-complexity electronic circuits.
The methodology is based on powerpoint with presentations by voice and demonstrative videos, combined with carrying out laboratory work supported by the material taught in theoretical-practical classes, constituting the most appropriate way of transmitting to students the theoretical-practical skills essential to achieving the objectives. proposed in the curricular unit.
The use of the Moodle e-learning platform in Distance Learning allows diversifying the assessment methodology. The platform will support the carrying out of mini formative tests, solved or unsolved exercises with solutions, unsolved exercises without solutions, and class questions and constitutes the repository of all information regarding the curricular unit in question. At the same time, an asynchronous monitoring of learning is carried out on the moodle platform and MS-Teams.

Software

PSPICE Student
MultiSim
TinkerCad

Palavras Chave

Technological sciences > Engineering > Electronic engineering

Tipo de avaliação

Distributed evaluation without final exam

Componentes de Avaliação

Designation Peso (%)
Participação presencial 10,00
Teste 50,00
Trabalho laboratorial 40,00
Total: 100,00

Componentes de Ocupação

Designation Tempo (Horas)
Estudo autónomo 87,00
Frequência das aulas 45,00
Trabalho laboratorial 30,00
Total: 162,00

Obtenção de frequência

A score in the Theoretical component below 9.0 (nine) implies failure in the UC; The grade obtained in the Theoretical Exam (ET) cannot be less than 10 (ten) values; The average of Laboratory Work (TL) cannot be less than ten (10) values, as this implies failure in the Unit; To obtain frequency, the student must previously prepare five proposed works and deliver at the end of each laboratory a report on the experimental setups and/or simulations performed.

Fórmula de cálculo da classificação final

For students with the possibility of attending the course on a continuous assessment basis:

NF= 0.6xT + 0.4xLAB


Subtitle:
NF - final grade;
Theoretical Component = 0.1 MTF + 0.5 Qaula
MTF - Mini formative tests;
Qaula - Mini-tests/class questions/ Kahoot questionnaires;
LAB - note of laboratory work.

Notes:
(1) Three mini-tests are planned;
(2) It is planned to hold 5 LABs;
(3) It is mandatory to be registered on the moodle platform to have access to the materials available for the course;
(4) The performance of examination tests for the purpose of improvement is subject to registration with the Academic Office according to the current regulations. The grade improvement focuses solely and exclusively on the theoretical component of the assessment associated with the tests;

Avaliação especial (TE, DA, ...)

For students who were unable to attend the course in the continuous assessment regime (students with TE status), or who failed the Theoretical component, the final grade will be calculated as follows:

NF = 0.6xEXF + 0.4xLAB

Subtitle:
EXF - final exam;
LAB - note of laboratory work.

Melhoria de classificação

The performance of exams for the purpose of improvement is subject to registration with the Academic Office according to the current regulations. The grade improvement focuses solely and exclusively on the theoretical component of the assessment associated with the tests.
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