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Electronics

Code:

REID11

Sigla:

ELE

Áreas Científicas
Classificação	Área Científica
CNAEF	Electronics and automation

Ocorrência: 2023/2024 - 2S

Ativa?	Yes
Página Web:	https://moodle.ips.pt/2324/course/view.php?id=1538
Unidade Responsável:	Departamento de Engenharia Eletrotécnica
Curso/CE Responsável:	Professional Technical Higher Education Courses in Smart Grids and Home Automation

Ciclos de Estudo/Cursos

Sigla	Nº de Estudantes	Plano de Estudos	Anos Curriculares	Créditos UCN	Créditos ECTS	Horas de Contacto	Horas Totais
REID	25	Plano de Estudos 2018/19	1	-	6	60	162

Língua de trabalho

Portuguese

Objetivos

The main objectives of this course unit are to provide students with knowledge of:

•     Junction Diodes


•     Bipolar Junction Transistors (BJT)


•     Field Effect Transistors (MOSFET)

Resultados de aprendizagem e competências

At the end of this course, the student should be able to:

• Design, dimensionate, simulate and test circuits with Junction Diodes


• Design, dimensionate, simulate and test circuits with Bipolar Junction Transistors (BJT)


• Design, dimensionate, simulate and test circuits with Field Effect Transistors (MOSFET)

Modo de trabalho

Presencial

Pré-requisitos (conhecimentos prévios) e co-requisitos (conhecimentos simultâneos)

Knowledge of electric circuit analysis

Programa

1. Junction diodes

• Intrinsic and extrinsic semiconductor


• Unpolarized and polarized PN junction


• Symbol, voltage and current in the diode


• Diode ID(VD) characteristic


• Ideal model and piecewise linear model


• Zener diode


• Diode circuits (rectifiers and voltage limiters)

2. Bipolar Junction Transistors (BJT)

• Symbology, voltages and currents in NPN and PNP transistors


• Direct Active Zone, Saturation Zone and Cut-Off Zone


• BJT models for different operating modes


• BJT characteristic curves


• Quiescente Point (QP)


• The BJT as a switch and as an amplifier

3. Field Effect Transistors (MOSFET)

• N-channel and P-channel MOSFET transistors


• MOSFET characteristic curves


• Symbology, voltages and currents in MOSFET transistors


• MOSFET models for different operating modes


• Quiescente Point (QP)


• The MOSFET as a switch and as an amplifier

Bibliografia Obrigatória

Thomas Floyd; Electronic Devices - Global Edition, Pearson, 10ª edição, 2018. ISBN: 978-1292222998

Métodos de ensino e atividades de aprendizagem

Theoretical-practical classes where the subject is explained and exercises are solved to consolidate the knowledge acquired.

Laboratory classes, where practical work is carried out to experiment with the subjects taught in the lectures. Students have to prepare reports on practical activities.

Palavras Chave

Technological sciences > Engineering > Electrical engineering

Tipo de avaliação

Distributed evaluation without final exam

Componentes de Avaliação

Designation	Peso (%)
Teste	60,00
Trabalho laboratorial	40,00
Total:	100,00

Componentes de Ocupação

Designation	Tempo (Horas)
Estudo autónomo	57,00
Frequência das aulas	30,00
Trabalho escrito	45,00
Trabalho laboratorial	30,00
Total:	162,00

Obtenção de frequência

The minimum grade in the Theory Exam or the Average of 2 Tests is 7 (seven) points.

The minimum grade for the Practical Laboratory Activity Reports is 9.5 (nine point five). The grade is calculated as the average of the N-1 best grades out of a total of N laboratory assignments.

Reports must be submitted by the date set in the Moodle submission item. Late submission of reports will incur a penalty of 0.5 points per day.

Fórmula de cálculo da classificação final

The Final Grade will be obtained based on the formula:

  Final Grade = 60% Theoretical Exam or Average of 2 Tests +

                      40 % Practical Laboratory Activities (APL)


The Grade for Practical Laboratory Activities (APL) will be based on the formula:

  APL Grade = 50 % Average of Reports +

                     30 % Practical Test +

                     20 % Performance in the laboratory