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Introduction to Electronics

Code:

LACI12007

Sigla:

IE

Áreas Científicas
Classificação	Área Científica
OFICIAL	Electrónica e Telecomunicações

Ocorrência: 2022/2023 - 2S

Ativa?	Yes
Unidade Responsável:	Departamento de Engenharia Eletrotécnica
Curso/CE Responsável:

Ciclos de Estudo/Cursos

Sigla	Nº de Estudantes	Plano de Estudos	Anos Curriculares	Créditos UCN	Créditos ECTS	Horas de Contacto	Horas Totais
EACI	51	Plano de Estudos 14	1	-	6	60	162

Língua de trabalho

Portuguese

Objetivos

Enumerate the concept of semiconductor material; Point out the differences between intrinsic and extrinsic semiconductor material; Understand the conduction process in the various diodes (rectifier, light emitter and zener); Understand the avalanche process in the zener diode; Question and interpret the conduction states in the rectifier diode, light emitting diode and zener diode; Understand the difference between conventional and real sense of an electric current; Know the symbology associated with the different diodes; Analyze circuits with rectifier diodes, LED and zener; Apply the different conduction models associated with diodes; Understand the constitution of the Bipolar Junction Transistor (TBJ)/Metal Oxide Semiconductor (MOSFET); Identify the TBJ/MOSFET symbology; Distinguish NPN from PNP transistor;
Distinguish N-channel from P-channel MOSFET transistor; Understand how the enrichment and depletion MOSFET works; Identify and analyze the MOSFET models for the different modes of operation; Understand the driving process in the TBJ/MOSFET; Identify and understand the TBJ/MOSFET operating modes; Identify the main assemblies of a transistor (TBJ/MOSFET) and their polarization meshes; Evaluate the transistor (TBJ/MOSFET) as a switch/amplifier element; Identify, understand and interpret the main characteristic curves of the TBJ/MOSFET; Evaluate the resting point of operation of the TBJ/MOSFET; Understand the temperature compensation effect in the common emitter assembly; Identify and understand the function of coupling and contour capacitors; Design polarization meshes in common emitter/common source configuration; Analyze low complexity electronic circuits; Simulate low complexity electronic circuits; Interpret and understand the function of coupling and contour capacitors in low-complexity assemblies; Locate the presence of coupling and bypass capacitors in an electronic amplifier circuit; Assemble, test and experiment with low-complexity electronic circuits.

Resultados de aprendizagem e competências

The theoretical-practical expositions by the teachers promote the acquisition of up-to-date knowledge on the topics studied. At the same time, the realization of application problems/simulations independently is encouraged, with subsequent presentation of results obtained by the students (in groups or individually) that motivate reflection, criticism, and help a greater participation in the learning process. Viewing videos demonstrating the operation of the various electronic devices.

Laboratory Classes: Simulation/Experimental method applied to the development of circuits and systems based on the knowledge acquired in theoretical/practical classes.

Modo de trabalho

Presencial

Pré-requisitos (conhecimentos prévios) e co-requisitos (conhecimentos simultâneos)

The knowledge acquired in the discipline of Electrotechnics, whose objective and bibliography are described in the respective Discipline Sheet, in this Information System.

Programa

unction Diode
Semiconductor Concept. Intrinsic and extrinsic semiconductor. PN junction. Non-polarized PN junction. Directly biased PN junction. Reverse-biased PN junction. Conventional direction of voltage and current in the diode. V-I characteristic of the diode. Diode symbology. Linear model, Simplified linear model, Ideal diode model. Diode applications. Dynamic resistance of the diode. Special diodes.

Bipolar Junction Transistor (BJT) Bipolar Junction Transistor (BJT). BJT NPN. BJT PNP. Symbology of NPN and PNP transistors. Conventional direction of currents and voltages in BJTs. Transistor operating modes: ZAD (Forward Active Zone), ZS (Saturation Zone), ZC (Cutoff Zone), ZAI (Reverse Active Zone). BJT models for the different operating modes. Early Effect. BJT Characteristics Curves, Basic BJT Mounting Settings and Polarization Meshes. Determining the operating mode. Operating point at rest (PFR). BJT as a switch. Temperature effect compensation (Common Emitter).Function of coupling and bypass capacitors (Common Emitter). Project of polarization meshes (Common Emitter).

Metal Oxide Semiconductor Transistor (MOSFET) Metal Oxide Semiconductor Transistor (MOSFET) N channel. Metal Oxide Semiconductor Transistor (MOSFET) P channel. Characteristic curves of the MOSFET. enrichment and depletion MOSFET. Commonly used symbologies for FETs. Conventional direction of currents and voltages in the FETs. Operating modes of field effect transistors. MOSFET models for the different operating modes. Determining the operating mode. Static load line. Operating Point at Rest. Polarization Meshes. FET as a switch. Project of polarization meshes.

Bibliografia Obrigatória

Robert Boylestad / Louis Nashelsky; Dispositivos Electrónicos e Teoria dos Circuitos. ISBN: ISBN: 85-216-1195-1
Adel Sedra / Kenneth Smith; Microelectronics Circuits, 1998. ISBN: ISBN: 0-19-511690-9
Manuel de Medeiros Silva; Circuitos com Transistores Bipolares e MOS, Fundação Calouste Gulbenkian. ISBN: 972-31-0840-2

Bibliografia Complementar

Manuel de Medeiros Silva; Introdução aos circuitos eléctricos e electrónicos, Fundação Calouste Gulbenkian. ISBN: 972-31-0696-5
Acácio Amaral; Electrónica Analógica: Princípios, Análise e Projectos, Edições Silabo, 2014. ISBN: 978-972-618-767-7

Métodos de ensino e atividades de aprendizagem

The main goal of this course unit is to impart knowledge necessary to understand the fundamental elements of electronics. Develop skills for analysis, design, simulation and execution of low-complexity electronic circuits.
The methodology is based on powerpoint with presentations by voice and demonstrative videos, combined with carrying out laboratory work supported by the material taught in theoretical-practical classes, constituting the most appropriate way of transmitting to students the theoretical-practical skills essential to achieving the objectives. proposed in the curricular unit.
The use of the Moodle e-learning platform in Distance Learning allows diversifying the assessment methodology. The platform will support solved or unsolved exercises with solutions, unsolved exercises without solutions, and class questions and constitutes the repository of all information regarding the curricular unit in question. At the same time, an asynchronous monitoring of learning is carried out on the moodle platform and MS-Teams.

Software

PSPICE Student
MultiSim
TinkerCad

Palavras Chave

Technological sciences > Engineering > Electronic engineering

Tipo de avaliação

Distributed evaluation without final exam

Componentes de Avaliação

Designation	Peso (%)
Participação presencial	20,00
Teste	40,00
Trabalho laboratorial	40,00
Total:	100,00

Componentes de Ocupação

Designation	Tempo (Horas)
Estudo autónomo	102,00
Frequência das aulas	30,00
Trabalho laboratorial	30,00
Total:	162,00

Obtenção de frequência

A score in the Theoretical component below 9.0 (nine) implies failure in the UC; If classification is less than 8 values in the mini-tests average implies failure in the UC in continuous assessement. The minimum score in each of the mini-tests can not be less than 8 values.

If the attendance to the theoretical-practice is less than 75%, the student can only take the theoretical component in the Exam time (Normal), that is, the student is excluded from the continuous assessement process. In this case, the approval is postponed to Appeal exam.

It is not possible to take more than one mini-test on each assessement date, so a student who fails a single mini-test will only be able to recover that mini-test on the exam date of the Normal season. It it fails, then the theoretical evaluation will be postponed for the exam in the season of Appeal.

The grade obtained in the Theoretical Exam (ET) cannot be less than 10 (ten) values.

The average of Laboratory Work (TL) cannot be less than ten (10) values, as this implies failure in the Unit; To obtain frequency, the student must previously prepare five proposed works and deliver at the end of each laboratory session setups/results and/or simulations carried out. In the last laboratory session of each work, each student is submitted to a laboratory test.

Fórmula de cálculo da classificação final

For students with the possibility of attending the course on a continuous assessment basis:

NF= 0.6 T + 0.4 LAB

Subtitle:
NF - final grade;
Theoretical Component (T) = 0.4 MT + 0.05 Qextra-aula + 0.15 FA
MT - Minitest
Qextra-aula - extra class questions;
FA - Evaluation files;
LAB - note of laboratory work.

Notes:
(1) Three mini-tests are planned;
(2) It is planned to hold 5 LABs;
(3) It is mandatory to be registered on the moodle platform to have access to the materials available for the course;
(4) The performance of examination tests for the purpose of improvement is subject to registration with the Academic Office according to the current regulations. The grade improvement focuses solely and exclusively on the theoretical component of the assessment associated with the tests;

Avaliação especial (TE, DA, ...)

For students who were unable to attend the course in the continuous assessment regime (students with TE status), or who failed the Theoretical component, the final grade will be calculated as follows:

NF = 0.6 EXF + 0.4 LAB

Subtitle:
EXF - final exam;
LAB - note of laboratory work.

Melhoria de classificação

The performance of exams for the purpose of improvement is subject to registration with the Academic Office according to the current regulations. The grade improvement focuses solely and exclusively on the theoretical component of the assessment associated with the tests.